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Variable-length gateless transistor for analog one-Time-programmable memory applications
Conference paper

Variable-length gateless transistor for analog one-Time-programmable memory applications

Po-Ruei Cheng, Chih-Sung Yang, Meng-Yin Hsu, Chrong Jung Lin and Ya-Chin King
2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016, 7480485
05/2016
DOI: https://doi.org/10.1109/VLSI-TSA.2016.7480485

Abstract

Hardware and Architecture Electrical and Electronic Engineering
This work presents a novel embedded Analog Gateless One-Time-Programming Memory (AG-OTP), implemented by standard CMOS logic process. The NVM cell includes a gateless storage node in series with a select transistor; where the charge stored on the parasitic ONO structure. The p-channel device is programmed by channel hot hole induced hot electron injection (CHHIHE). An angled-shaped source region allows the gateless channel to be partially turned-on and gradually increase the read current level. This unique structure enable the storage of analog data as continuous read current can be readily achieved.

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