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Vertically integrated CMOS-MEMS capacitive humidity sensor and a resistive temperature detector for environment application
Conference paper

Vertically integrated CMOS-MEMS capacitive humidity sensor and a resistive temperature detector for environment application

Sih-Chieh Chen, Vincent P.J. Chung, Da-Jeng Yao and Weileun Fang
TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, pp.1453-1454
07/2017
DOI: https://doi.org/10.1109/TRANSDUCERS.2017.7994333

Abstract

Capacitive relative humidity sensor CMOS-MEMS Polyimide RTD Vertical integration Chemical Health and Safety Instrumentation Electrical and Electronic Engineering
This study demonstrates the vertically integrated environment sensor with a capacitive relative humidity sensor (RH-sensor) and a resistive temperature detector (RTD) using the TSMC 0.18μm 1P6M CMOS process. Features of this study are: (1) multiple sensing units could be vertically implemented and integrated in one chip; (2) fast response humidity sensor is realized based on fence-shaped capacitor (supported by oxide pillars) with polyimide (PI) filler; (3) simple post-CMOS processes include metal wet etching and pneumatic dispensing of PI. Measurement results indicate the RH sensor with sensitivity of 0.051%/%RH and response time of 16s; and temperature coefficient of resistance (TCR) of RTD is 0.28%/°C.

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