Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

Yi-Shan Lee; Yu-Jia Chen; Naseem; Ping-Li Wu; Jin-Wei Shi

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Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

Yi-Shan Lee, Yu-Jia Chen, Naseem, Ping-Li Wu and Jin-Wei Shi

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol.2020-May, 9193122

05/2020

Abstract

Electronic

Optical and Magnetic Materials

Electrical and Electronic Engineering

We present novel InGaAs/InAlAs single photon avalanche diodes with dual multiplication layers, large active diameters (240μm), high detection efficiency (32%), record small jitter (35ps), and low afterpulsing (<1% at 2μs hold-off time) at nearly 200K.

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Title: Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers
Translated title: Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers
Creators - without role: Yi-Shan Lee - Department of Electrical Engineering , National Central University
Yu-Jia Chen - Department of Electrical Engineering , National Central University
Naseem - Department of Electrical Engineering , National Central University
Ping-Li Wu - Department of Electrical Engineering , National Central University
Jin-Wei Shi - Department of Electrical Engineering , National Central University
Publication Details: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol.2020-May, 9193122
Identifiers: 9781943580767; 9957769553606774
Academic Unit: Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

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