- Title
- Very High Stoichiometric GeO2 in Interfacial Layer of Ge MOS Devices by In-situ H2O Plasma Process
- Creators - without role
- Li-Jung LiuKuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系Chung-Hao FuTing-Ching ChenChen-Chien LiJen-Wei ChengChun-Chang LuTzu-Min LeeLi-Ting ChenShih-Han YiTien-Ko Wang
- Publication Details
- 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
- Identifiers
- 9957768009706774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- Traditional Chinese
- Resource Type
- Conference paper
Conference paper
Very High Stoichiometric GeO2 in Interfacial Layer of Ge MOS Devices by In-situ H2O Plasma Process
2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
2013
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