Very Low EOT and High Mobility in Ge MOSFETs with Very High Oxidation State Interfacial Layer by In-situ Plasma and Desorption Processes

Conference paper

Yan-Lin Li, Kuei-Shu Chang-Liao, Chen-Chien Li, Li-Jung Liu, Ting-Ching Chen and Tzu-Min Lee

45 th IEEE Semiconductor Interface Specialists Conference 45 th IEEE Semiconductor Interface Specialists Conference

2014

Abstract

Very Low EOT;High Mobility;Ge MOSFETs;Very High Oxidation State;Interfacial Layer;In-situ;Plasma;Desorption

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Title: Very Low EOT and High Mobility in Ge MOSFETs with Very High Oxidation State Interfacial Layer by In-situ Plasma and Desorption Processes
Creators - without role: Yan-Lin Li
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Chen-Chien Li
Li-Jung Liu
Ting-Ching Chen
Tzu-Min Lee
Publication Details: 45 th IEEE Semiconductor Interface Specialists Conference 45 th IEEE Semiconductor Interface Specialists Conference
Identifiers: 9957767113206774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper