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Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H2O Plasma Grown GeO2
Conference paper

Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H2O Plasma Grown GeO2

Li-Jung Liu, Kuei-Shu Chang-Liao, Chung-Hao Fu, Ting-Ching Chen, Chen-Chien Li, Jen-Wei Cheng, Chun-Chang Lu, Tzu-Min Lee, Li-Ting Chen, Shih-Han Yi, …
2013 International Conference on Solid State Devices and Materials 2013 International Conference on Solid State Devices and Materials
2013

Abstract

Very Low EOT;High Mobility;Ge pMOSFETs;ALD-formed HfON;in-situ H2O Plasma;GeO2
The TaN/HfON/GeO2/n-Ge pMOSFETs with different formation processes of GeO2 interfacial layer are studied. A very low EOT of ~0.5 nm with a highly stoichiometric GeO2 interfacial layer is achieved by in-situ H2O plasma grown GeO2 together with ALD-formed HfON. The peak hole mobility of Ge pMOSFET is 312 cm2/V*s.

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