Very-fast timing performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

Yi-Shan Lee; Yu-Jia Chen; Naseem; Ping-Li Wu; Jin-Wei Shi

doi:10.1364/CLEO_AT.2020.AF1I.8

Back

Conference paper

Very-fast timing performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

Yi-Shan Lee, Yu-Jia Chen, Naseem, Ping-Li Wu and Jin-Wei Shi

Optics InfoBase Conference Papers, Vol.Part F181-CLEO-AT 2020, AF1I.8

2020

DOI: https://doi.org/10.1364/CLEO_AT.2020.AF1I.8

Abstract

Electronic

Optical and Magnetic Materials

Mechanics of Materials

We present novel InGaAs/InAlAs single photon avalanche diodes with dual multiplication layers, large active diameters (240µm), high detection efficiency (32%), record small jitter (35ps), and low afterpulsing (<1% at 2µs hold-off time) at nearly 200K.

Metrics

1 Record Views

See more details

Details

Title: Very-fast timing performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers
Translated title: Very-fast timing performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers
Creators - without role: Yi-Shan Lee - National Central University
Yu-Jia Chen - Department of Electrical Engineering , National Central University
Naseem - Department of Electrical Engineering , National Central University
Ping-Li Wu - National Central University
Jin-Wei Shi - Department of Electrical Engineering , National Central University
Publication Details: Optics InfoBase Conference Papers, Vol.Part F181-CLEO-AT 2020, AF1I.8
Identifiers: 9781557528209; 9957769865106774
Academic Unit: Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Very-fast timing performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

Abstract

Related links

Metrics

Details

National Tsing Hua University Social media