Viable Poly-Si Nanowire Flash Memory Devices with Low Temperature-formed SiO2 Tunneling and Si3N4 Trapping Layers

Conference paper

Chia-Hsin Cheng, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Chun-Yuan Chen, Po-Hao Chen, Dong-Yan Li, Chang-Hong Shen and Jia-Min Shieh

2015

Abstract

Viable Poly-Si Nanowire;Flash Memory Devices;Low Temperature-formed SiO2;Tunneling;Si3N4 Trapping Layers

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Title: Viable Poly-Si Nanowire Flash Memory Devices with Low Temperature-formed SiO2 Tunneling and Si3N4 Trapping Layers
Creators - without role: Chia-Hsin Cheng
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Hsin-Kai Fang
Chun-Yuan Chen
Po-Hao Chen
Dong-Yan Li
Chang-Hong Shen
Jia-Min Shieh
Identifiers: 9957767625606774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper