Abstract
In the present work we report the effect of visible (VIS) light on the conductivity of SnO 2 nanobelts. The existence of visible light effect is unusual, since bulk SnO 2 is a wide band gap semiconductor. Two types of nanobelt alignment/trapping methods were used in fabricating devices for study of the visible light effect. Fluid flow alignment was used for making individual nanobelt devices, while AC dielectrophoresis was used to trap multiple nanobelts. DC current passing through the SnO 2 nanobelt devices was monitored under VIS and UV light illumination. Visible photoluminescence was also observed in the nanobelt samples. © 2007 IEEE.