Abstract
We demonstrate WO x -HZO-PEALD-TiN interface-engineered ferroelectric capacitors achieving >2×10 10 -cycle endurance and 1.5 V operation. A thin WO x interfacial layer suppresses oxygen-vacancy-related charge trapping and mitigates local electric-field nonuniformity, while the PEALD-TiN top electrode limits defect generation during cycling. The devices exhibit a dielectric constant above 60 and stable polarization (2Pr ≈ 20 µC cm −2 ) after wake-up at 1.5V. Full switching occurs at 2V with negligible imprint and no fatigue up to 2×10 10 cycles. These results highlight that precise interface engineering enables sub-2 V, ultra-reliable ferroelectric capacitors, bridging the endurance-voltage gap toward low-power nonvolatile-memory applications.