摘要
This study presents the design, implementation, and performance evaluation of a watt-level 10 GHz class-F finger-type gallium nitride (GaN) Schottky barrier diode (SBD) rectifier for microwave power transfer (MPT) applications. The SBD, with an ultra-low zero-bias junction capacitance of 0.19 pF, an ultra-high breakdown voltage exceeding 150 V, a turn-on voltage of 1.24 V, and an on-resistance of 11Ω, demonstrates exceptional performance at X -band rectification. The rectifier circuit is optimized with a class-F harmonic control network. A maximum microwave-to-DC power conversion efficiency of 61.2 % is achieved at an input power of 36 dBm. These results underscore the potential of high-power GaN SBDs in enabling next-generation high-frequency and high-power MPT systems, offering significant improvements in efficiency and power handling capabilities.