Abstract
Using a scintillator-CCD imaging system, we successfully conducted a synchrotron white beam Laue topography (WBLT) experiment. It is demonstrated that this approach is able to provide a high-resolution microtopograph of p/p + Si (1 0 0). Optimum condition for high-resolution imaging is obtainable from the incident angle dependence of geometrical resolution. Black and white dislocation contrast suggests the potential of WBLT in characterizing dislocation structure. © 2005 Elsevier B.V. All rights reserved.