Wrinkled SiGe Nanofilms as a Source of Terahertz Radiation

Alexander I. Fedorchenko; Henry H. Cheng; Anastasia Koroleva; Wei-Chih Wang

doi:10.1109/ISOT.2014.37

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Conference paper

Wrinkled SiGe Nanofilms as a Source of Terahertz Radiation

Alexander I. Fedorchenko, Henry H. Cheng, Anastasia Koroleva and Wei-Chih Wang

2014 International Symposium on Optomechatronic Technologies, ISOT 2014, pp.121-124

2014

DOI: https://doi.org/10.1109/ISOT.2014.37

Abstract

hole oscillation

terahertz radiation

wrinkled SiGe nanofilms

Mechanical Engineering

Electrical and Electronic Engineering

We demonstrate that the wrinkled Si1 - xGex/Si1 - y Gey films can serve as radiation sources, which emit electromagnetic waves in a very wide range of the frequencies including the terahertz band from 0.3 to 3 THz. The emission mechanism is based on the change of acceleration of carriers, when they travel along the sinusoidal trajectory in wrinkled Si1 - xGex/Si1 - yGey films, a manner similar to synchrotron radiation with undulators, or like a free-electron laser.

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Title: Wrinkled SiGe Nanofilms as a Source of Terahertz Radiation
Translated title: Wrinkled SiGe Nanofilms as a Source of Terahertz Radiation
Creators - without role: Alexander I. Fedorchenko - 1Institute of Thermomechanics of AS CR v.v.i.
Henry H. Cheng - National Taiwan University
Anastasia Koroleva - Czech Academy of Sciences, Institute of Thermomechanics
Wei-Chih Wang - University of Washington
Publication Details: 2014 International Symposium on Optomechatronic Technologies, ISOT 2014, pp.121-124
Identifiers: 9781467367523; 9957772403806774
Academic Unit: Institute of NanoEngineering and Microsystems, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper

Wrinkled SiGe Nanofilms as a Source of Terahertz Radiation

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