900 MHz Low Phase Noise LINBO3/ SIO2/ Sapphire SAW Delay Line Oscillator with a Close-in FOM of 210 dB at 10-KHz Offset

Y.-C. Yu; Z.-Q. Lee; S.-Y. Huang; Y.-S. Lin; M.-H. Li

doi:10.1109/MEMS64181.2026.11419451

會議論文集

900 MHz Low Phase Noise LINBO3/ SIO2/ Sapphire SAW Delay Line Oscillator with a Close-in FOM of 210 dB at 10-KHz Offset

Y.-C. Yu, Z.-Q. Lee, S.-Y. Huang, Y.-S. Lin 和 M.-H. Li

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 頁碼.91-94

2026

DOI: https://doi.org/10.1109/MEMS64181.2026.11419451

Web of Science ID: WOS:001799185400023

摘要

acoustic delay line (ADL)

lithium niobate (LiNbO<sub>3</sub>

oscillator

phase noise

piezoelectric

shear horizontal

Surface acoustic wave (SAW)

Acoustic noise

Acoustic surface wave devices

Frequency selective surfaces

Group delay

Lithium compounds

Low noise amplifiers

Niobium compounds

Oscillators (electronic)

Sapphire

Sawing

Shear flow

Silicon compounds

Acoustic delay line

LiNbO 3

Lithium niobate

Lithium niobate (LiNbO3

Low-phase-noise

Phase-noise

Piezoelectric

Shear horizontals

Surface acoustic wave

Surface acoustic waves

Phase noise

In this work, we present a 900 MHz low phase noise (PN) acoustic delay line (ADL) oscillator based on a LiNbO3/ SiO2/ Sapphire (LNOS) functional substrate and a low-noise RF amplifier, achieving an impressive close-in figure-of-merit (FOM) of 210 dB at 10-kHz offset. Since a large group delay (τG) is essential for reducing PN in delaybased oscillators, a 937 MHz low-loss shear-horizontal surface acoustic wave (SH-SAW) ADL with insertion loss (IL) of 11 dB and τG of 487 ns is implemented as the frequency-selective element. The oscillator achieves high-FOM, low-PN operation, demonstrating close-in PN of 104.8 dBc/ Hz(FOM=204 dB) at 1-kHz offset and -130.7 dBc/Hz(FOM=210 dB) at 10-kHz offset, with 12 kHz to 20 MHz integrated jitter <; 28.9 fs. The proposed LNOS SAW oscillator competes favorably with state-of-the-art microacoustic RF oscillators in terms of close-in FOM. © 2026 IEEE.

檔案與連結 (1)

url

https://www.scopus.com/inward/record.uri?eid=2-s2.0-105041756913&doi=10.1109%2fMEMS64181.2026.11419451&partnerID=40&md5=9f8fdd5854ca84201d5afe55f92b955f檢視

指標

1 檢視次數

詳細資料

題名: 900 MHz Low Phase Noise LINBO3/ SIO2/ Sapphire SAW Delay Line Oscillator with a Close-in FOM of 210 dB at 10-KHz Offset
創作者：: Y.-C. Yu - National Tsing Hua University
Z.-Q. Lee - National Tsing Hua University
S.-Y. Huang
Y.-S. Lin - National Tsing Hua University
M.-H. Li - National Tsing Hua University
出版者: Institute of Electrical and Electronics Engineers Inc.; NEW YORK
總頁數: 4
補助款備註: NSTC of Taiwan: 112-2221-E-007-103-MY3 CNMM of NTHU
This work was supported by the NSTC of Taiwan under grant 112-2221-E-007-103-MY3. The authors would like to thank the CNMM of NTHU for device fabrication.
學術資源類型: 會議論文集
出版日期: 2026
出版資訊: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 頁碼.91-94
語言: 英語

900 MHz Low Phase Noise LINBO3/ SIO2/ Sapphire SAW Delay Line Oscillator with a Close-in FOM of 210 dB at 10-KHz Offset

摘要

檔案與連結 (1)

相關連結

指標

詳細資料

National Tsing Hua University 社交媒體