摘要
The proposed GaN-based voltage reference (VREF) generator (VRG) has a low temperature coefficient (TC) of $15.4\text{ppm}/{}^{\circ}\mathrm{C}$, a small deviation of VREF at different process corners with a standard deviation of 0.22%, a great line sensitivity of 0.0023%/V, and a great power-supply rejection (PSR) of -187dB and -114dB at 100Hz and 50MHz, respectively. The proportional-to-absolute-temperature (PTAT) IG of enhancement-mode GaN (eGaN) can optimize TC. Eliminating the IG of depletion-mode GaN (dGaN) and using multiple stacked composite dGaN can improve line regulation and PSR. All performance is achieved with a low power consumption of $10.9\mu \mathrm{W}$.