摘要
This paper proposes a novel SPICE model for SiC MOSFETs that accurately reproduces reverse recovery characteristics, specifically addressing the Quasi-Floating Channel (QFC) effect. Conventional models often neglect the significant impact of negative gate bias V GS on conductivity modulation in SiC devices. We introduce a Coupling-Charge drive Reverse-Recovery (CCRR) approach that employs a voltage-controlled current source to decouple the carrier lifetime emulation network from the main circuit. This method eliminates parasitic capacitance artifacts while precisely predicting Q rr variation across different temperatures and gate biases. Experimental validation demonstrates that the proposed model achieves excellent agreement with measurements across a wide range of temperatures. The simulation results confirm the model's ability to accurately reproduce the reverse recovery dynamics, reducing the Q rr estimation error to less than 5%.