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A Monolithic GaN-based Gate Driver for LLC-SRC with Three-Phase Startup Clamping Achieving 23.2μA IQ and 98.6% Peak Efficiency
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A Monolithic GaN-based Gate Driver for LLC-SRC with Three-Phase Startup Clamping Achieving 23.2μA IQ and 98.6% Peak Efficiency

Chi-Yu Chen, Tz-Wun Wang, Po-Jui Chiu, Sheng-Hsi Hung, Chang-Lin Go, Xiao-Quan Wu, Yu-Ting Huang, Ke-Horng Chen, Kuo-Lin Zeng, Ying-Hsi Lin, …
Digest of technical papers - Symposium on VLSI Technology, 頁碼.1-2
16/06/2024

摘要

Gate drivers Leakage currents Power demand Stars Titanium Very large scale integration Voltage
To meet Energy Star and 80 Plus Titanium standards, the proposed hybrid gate driver reduces the quiescent current (I Q ) to 23.2μA by reducing GaN leakage current. The proposed auto-precharge (APC) technique can reduce the leakage current (I LKG ) in standby mode from a few milliamperes to 60.4μA, resulting in an efficiency greater than 92% at the entire output load. In addition, soft-start clamping (SSC) technique reduces the peak voltage from 2.51kVto 620V, safely reducing power consumption during soft-start. As a result, the LLC converter achieves a peak efficiency of 98.6%.

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