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A Simple Layout Methodology to Increase the Electrical Safe-Operating Area (E-SOA) Boundary for Power Transistor
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A Simple Layout Methodology to Increase the Electrical Safe-Operating Area (E-SOA) Boundary for Power Transistor

Chien-Wei Wang, Shih-Chieh Chien, Yu-Sheng Chiu, Jung-Tsun Chuang, Chieh-Yao Chuang, Chih-Fang Huang 和 Jian-Hsing Lee
IEEE International Conference on Consumer Electronics-China (Online), 頁碼.77-78
16/07/2025
DOI: https://doi.org/10.1109/ICCE-Taiwan66881.2025.11207962

摘要

Avalanche breakdown Breakdown voltage Consumer electronics Layout Power measurement Power transistors Pulse measurements Resistance heating Transistors Transmission lines
In this paper, a simple methodology to increase the electrical safe-operating area (ESOA) boundary of power transistor is presented. This is based on the transmission-line pulse (TLP) measured result, which reveals that the E-SOA boundary of power transistor increases with the diffusion width of the drain.

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