摘要
This paper presents an MMIC V-band oscillator employing an on-chip substrate integrated waveguide (SIW) resonator in \mathbf{0. 1 2 -} \boldsymbol{\mu} \mathbf{m} GaN HEMT technology. The proposed design adopts an inductor-terminated common-gate topology with a high-Q SIW resonator connected at the source node, where a rectangular cavity resonator is implemented using two metal layers and high-density vias to emulate waveguide boundaries on the chip (cavity size =1.2 \text{mm} \times 1.3 \text{mm}) , achieving loaded and unloaded Q factors of 70.9 and 146, respectively. Under a drain voltage of only \mathbf{6 V} (\boldsymbol{P}_{\mathbf{D C}} of \mathbf{1 1 0 ~ m W}) , the measured results demonstrate an oscillation frequency of 58.6 GHz with a peak output power of 10.1 dBm. The phase noise is -94.3 and -126.5 \text{dBc} / \text{Hz} at 1 and 10 MHz offset (corresponding FoMs are -169.1 and -181.2 \text{dBc} / \text{Hz}) , respectively. The obtained results are among the best compared to published V-band MMIC oscillators in advanced GaN HEMT technology. To the best of our knowledge, this work is the first reported monolithic GaN oscillator with the SIW resonator.