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A high tensile stress spacer by low temperature microwave anneal induced 50% mobility enhancement for nano scale FinFETs device
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A high tensile stress spacer by low temperature microwave anneal induced 50% mobility enhancement for nano scale FinFETs device

Y.-J. Chen, Y.-M. Huang, Y.-F. Hou, M.-C. Chen, Y.-J. Lee, W.-F. Wu 和 J.-M. Shieh
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 卷.2015-August, 頁碼.426-429
2015
DOI: https://doi.org/10.1109/IPFA.2015.7224417

摘要

Annealing Integrated circuits MOSFET devices Nanotechnology Rapid thermal annealing Temperature Tensile stress Contact etch stop layers Low temperature microwaves Low temperatures Microwave annealing Mobility enhancement Rapid thermal annealing (RTA) Stress enhancement Stress memorization techniques Failure analysis
Tensile stress enhancement by rapid thermal annealing (RTA) and microwave annealing (MWA) are compared in this study. SiNx films after low temperature MWA treatment depicted higher tensile stress than the films annealed by RTA. Therefore, MWA approach is useful in contact etch-stop layer or stress memorization technique for the fabrication of small pitch nanoscaled n-channel FinFETs. © 2015 IEEE.

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