摘要
Computing In-Memory (CIM), which directly performs in-situ operations at memory, is one of the promising solutions to overcome von Neumann bottleneck. Previous researchers have proposed an 8T-SRAM-based CIM structure to perform dot product (DP) computations by analog charging/discharging operations. However, CIM structure may suffer from variations and aging effects such as BTI and HCI, which threat the reliability of CIM operation results. In this paper, we propose an agingaware CIM operation framework which consists of an aging detection method and an aging tolerance technique. Specifically, we apply Dynamic Voltage Scaling (DVS) on affected CIM structure to compensate the current drop due to variations and aging effects. Experimental results show that our method can successfully calibrate dropped current and thus maintain the reliability of CIM operations.