- 題名
- An evaluation of the HotOzone™ process: A new post etch resist and residue removal process
- 創作者：
- Shawming Ma - Hewlett-Packard (United States)R. Parker - Hewlett-Packard (United States)R. Kavari - Hewlett-Packard (United States)I. Leal - ULSI Research Laboratory, HP Laboratories, Hewlett-Packard Company, Palo Alto, CA, United StatesD. G. Boyers - Phifer Smith (United States)J. T. Cremer - Phifer Smith (United States)IEEE
- 總頁數
- 3
- 學術資源類型
- 會議論文集
- 出版日期
- 2000
- 出版資訊
- Proceedings of the IEEE 2000 International Interconnect Technology Conference, Hyatt Regency Hotel, San Francisco Airport, Burlingame, California, June 5-7, 2000, 頁碼.46-48
- 語言
- 英語
會議論文集
An evaluation of the HotOzone™ process: A new post etch resist and residue removal process
Proceedings of the IEEE 2000 International Interconnect Technology Conference, Hyatt Regency Hotel, San Francisco Airport, Burlingame, California, June 5-7, 2000, 頁碼.46-48
2000
Web of Science ID: WOS:000088358400016
指標
1 檢視次數