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Analysis of Critical Schottky Distance Effect and Distributed Set Voltage in HfO2-based 1T-1R Device
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Analysis of Critical Schottky Distance Effect and Distributed Set Voltage in HfO2-based 1T-1R Device

S.-K. Lin, T.-C. Chang, W.-C. Huang, Y.-F. Tan 和 C.-H. Lien
IEEE International Conference on Microelectronic Test Structures, 卷.2023-March
2023
DOI: https://doi.org/10.1109/ICMTS55420.2023.10094175

摘要

HfO2 onetransistor-one-resistor (1T-1R) Resistive Random Access Memory (RRAM) Schottky Distance Hafnium oxides Distance effects High-resistance state Onetransistor-one-resistor (1t-1r) Random access memory Resistance random-access memory Resistive random access memory Schottky Schottky distance Set voltage State resistance RRAM
High resistance state (HRS) resistance on the set voltage in hafnium oxide-based resistance random access memory (RRAM) is investigated. Set voltage has a positive correlation to HRS in statistics. For analyzing the switching characteristics at different HRS resistance level, filament properties in the switching layer are analyzed by current-fitting technique. The fitting results show that Schottky distance becomes saturated at high resistance HRS. Finally, a physical model is proposed to explain our observation. © 2023 IEEE.

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