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Atomic-level Analysis by Synchrotron Radiation and Characterization of 2 nm, 3 nm, and 5 nm-thick Hf0.5Zr0.5O2 Negative Capacitance FinFET
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Atomic-level Analysis by Synchrotron Radiation and Characterization of 2 nm, 3 nm, and 5 nm-thick Hf0.5Zr0.5O2 Negative Capacitance FinFET

Meng-Ju Tsai, Pin-Jui Chen, Po-Yang Peng, Fu-Ju Hou 和 Yung-Chun Wu
IEEE Silicon Nanoelectronics Workshop, 頁碼.101-102
IEEE Silicon Nanoelectronics Workshop
01/01/2019
Web of Science ID: WOS:000501001400049

摘要

Engineering, Electrical & Electronic Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Engineering Technology
We report 2 nm, 3nm, and 5 nm-thick Hf0.5Zr0.5O2 (HZO) thin film by atomic-level characterization of negative capacitance Fin field effect transistors (NC-FinFET). GI-XRD by synchrotron radiation results reveal that HZO thin film has a clear orthorhombic(o) crystalline phase even in 2 nm-thick HZO. The proposed NC-FinFETs show sub-60 mV/decade subthreshold slope (SS) and nearly hysteresis-free behaviors, compared to baseline HfO2 FinFET.

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