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BEOL-Compatible GAAFET Hybrid Memory Based on HfO2/ZrO2 Superlattice with Morphotropic Phase Boundary
會議論文集

BEOL-Compatible GAAFET Hybrid Memory Based on HfO2/ZrO2 Superlattice with Morphotropic Phase Boundary

Kuei-Chun Liao, Chen-You Wei, Yi-Ju Yao, Cheng-En Wu, Chien-Lung Chen, Chih-Chao Yang, Guang-Li Luo, Fu-Ju Hou 和 Yung-Chun Wu
IEEE Silicon Nanoelectronics Workshop, 頁碼.38-39
IEEE Silicon Nanoelectronics Workshop
01/01/2025
Web of Science ID: WOS:001548681500020

摘要

Engineering, Electrical & Electronic Materials Science, Multidisciplinary Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Engineering Materials Science Technology
We propose a BEOL-compatible LTPS/SL-HZO GAAFET hybrid memory using SL-HZO with MPB properties as the charge-trapping layer. Fabricated via green laser crystallization and low-temperature microwave annealing, the device achieves low-voltage (+/- 4 V), high-speed (100 ns) operation, 10(6)-cycle endurance with only 12.5% memory window loss, and over 10-year retention. It also enables multi-bit and logic functions, showing strong potential for in-memory computing and 3D integration.

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