摘要
This study demonstrates stable morphotropic phase boundary characteristics in metal-ferroelectric-metal capacitors based on HfO 2 /ZrO 2 superlattice through low-temperature microwave annealing (MWA) technology, achieving an exceptional dielectric constant (\boldsymbol{\kappa=51}) . Moreover, compared to devices treated with rapid thermal annealing, those treated with MWA exhibit significantly lower leakage currents and higher breakdown strength. By reducing the thermal budget, this approach not only achieves outstanding electrical performance but also provides a highly promising solution for monolithic 3D integration applications.