摘要
In this paper, we investigate the sensing capabilities of complementary metal oxide semiconductor (CMOS) micromachined bimorph structures for uncooled infrared detection. By utilizing the inherent differences in thermal expansion coefficients between CMOS metallization and intermetal oxide layers, our sensing structure is innovatively fabricated without the need for additional thin-film deposition and lithographic processes. The in-pixel readout detects changes in capacitance caused by sensor displacement upon infrared absorption. The thermomechanical characteristics of the bimorph cantilever are comprehensively analyzed through finite-element simulations. The measured results illustrate a noise equivalent temperature difference (NETD) of 820 mK and a thermal time constant of 6.4 ms for infrared detection.