Comparative Study of T-Gate Structures in Nano-Channel GaN-on-SiC High Electron Mobility Transistors

會議論文集

Yu-Chen Liu, Dian Ying Wu, Hung Cheng Hsu, I. Hsuan Wang 和 Meng-Chyi Wu

Engineering proceedings, 卷.120(1), 頁.8

01/12/2025

摘要

AlGaN/GaN

electron beam lithography (EBL)

GaN on SiC substrate

RF-HEMT

T-shape gate

1 檢視次數

題名: Comparative Study of T-Gate Structures in Nano-Channel GaN-on-SiC High Electron Mobility Transistors
研究創作者-僅顯示姓名: Yu-Chen Liu
Dian Ying Wu
Hung Cheng Hsu
I. Hsuan Wang
Meng-Chyi Wu
學術資源類型: 會議論文集
出版日期: 01/12/2025
出版資訊: Engineering proceedings, 卷.120(1), 頁.8
語言: 英語