摘要
This work presents a low-temperature oxygen plasma treatment for modulating the electrical properties and defect distribution in atomic layer deposition In 2 O 3 thin-film transistors. After treatment, the devices exhibit a positive threshold voltage (V TH ) shift along with enhanced drive current and mobility. For \mathrm{L}=1 \mu \mathrm{m} devices, both transfer and output characteristics show improved current conduction. The analysis of density of state indicate that these improvements originate from redistribution of sub-gap states, particularly the suppression of deep acceptor-like defects. In addition, bias stability tests reveal reduced V TH shift under negative bias stress. These results demonstrate that low-temperature plasma processing effectively improves oxide transistor performance and stability.