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Development of laser implantation of nickel and annealing process on silicon-carbide substrates
Conference proceeding

Development of laser implantation of nickel and annealing process on silicon-carbide substrates

Rou-Jhen Chen, Yu-Hsin Yang, Chi-Hung Hwang, Chi-Chung Kei, Shiau-Cheng Shiu, Chun-Wei Liu, Yi-Cheng Lin, Wen-Tse Hsiao and Teng-I Yang
Proceedings of SPIE, the international society for optical engineering, Vol.13351, pp.133510X-133510X-3
Proceedings of SPIE
01/01/2025
DOI: https://doi.org/10.1117/12.3044636

Abstract

Optics Physical Sciences Science & Technology
In this study, we initially deposited a layer of Ni films onto a Silicon Carbide SiC substrate. We then employed a 532 nm pulsed laser to implant Ni films into the SiC substrate, followed by laser annealing to repair the crystal lattice of the SiC. The process involves multiple steps, including the deposition of Ni, laser implantation of Ni, and subsequent annealing, to optimize the material properties.

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