摘要
β-Ga 2 O 3 Schottky barrier diodes are promising ultra-wide-bandgap candidates for microwave-frequency power electronics, where robust reverse blocking and well-controlled parasitics under large-signal bias are simultaneously required. This work reports vertical β-Ga 2 O 3 SBDs employing nitrogen ion-implanted edge termination (ET) to mitigate anode-edge field crowding and enhance reverse-bias capability. The devices exhibit stable forward conduction with a minimum specific on-resistance of R on,sp = 4.5 mΩ · cm 2 , while maintaining low reverse leakage and a blocking capability of V bk > 1100 V within the measurement range. The C-V characterization further extracts the bias-dependent junction capacitance C j (V) and the net doping concentration, providing compact parameters for the modeling of equivalent-circuits and the microwave impedance design. These results highlight ion-implanted ET as an effective route to advance β-Ga 2 O 3 SBDs for microwave-frequency device applications.