摘要
This study demonstrates a high-performance Fe-GAAFET utilizing a 12-nm SL-HZO gate dielectric for BEOL integration. By employing microwave annealing (MWA), the SL-HZO based capacitor achieves superior crystallinity with a refined grain size compared to conventional RTA, effectively suppressing leakage and frequency dependency. The optimized MWA-treated Fe-GAAFET exhibits a large initial memory window (MW) of \text{1. 5 5 ~ V} . Reliability tests reveal a robust endurance of up to \text{1 0}^{\mathrm{6}} cycles and an excellent 10-year retention. These results highlight the potential of MWA SL-HZO GAAFET as a reliable solution for nextgeneration 3D-integrated non-volatile memory applications.