摘要
In this study, nanotwinned (NT) Cu-Ag thin-film interconnects were developed to enhance EM resistance and mechanical reliability for advanced packaging applications. The incorporation of 1.5 at.% Cu refined the grain structure, increased twin density, and reduced surface roughness compared with pure NT-Ag films. Under EM testing at 160 °C and 3 × 10 5 A/cm 2 for 168 h, Cu-Ag interconnects exhibited only a 20% resistance increase, whereas pure Ag showed a 76% rise. Microstructural analyses confirmed that Cu doping effectively suppressed void formation and mass depletion by limiting atomic diffusion. These results offer a promising interconnect solution for next-generation 3D-ICs and heterogeneous integration technologies.