We investigate the enhancement of electrostatic transduction in CMOS-MEMS capacitive micromachined ultrasound transducers (CMUTs) by employing atomic layer deposition (ALD) to modify the transduction gaps between the bottom electrode and the membrane. In this preliminary study, the effectiveness of the ALD deposition was experimentally evaluated using high-frequency CMUT arrays centered at 5.2, 7.9, and 13 MHz that implemented using the TSMC 0.18 μm standard CMOS process. With a 50 nm layer of aluminum oxide (Al2O3) coating, a 7-15 dB improvement in peak admittance is observed from CMUT array measurements. © 2025 IEEE.
- Enhancing Transduction Efficiency in CMOS-MEMS CMUTs Through Atomic Layer Deposition: A Preliminary Study
- T.-Y. Huang - National Tsing Hua UniversityM.-H. Li - National Tsing Hua University
- Institute of Electrical and Electronics Engineers Inc.; NEW YORK
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- NSTC of Taiwan: 113-2628-E-007-016-MY3 Taiwan Semiconductor Research Institute (TSRI) TSMC, Hsinchu, Taiwan CNMM of National Tsing Hua University, Hsinchu, Taiwan
This research is supported by the NSTC of Taiwan under grants 113-2628-E-007-016-MY3. The CMOS chip fabrication was supported by Taiwan Semiconductor Research Institute (TSRI) and TSMC, Hsinchu, Taiwan. The post-CMOS process is supported by the CNMM of National Tsing Hua University, Hsinchu, Taiwan. The ALD process was supported by Wei-Kai Sung and Prof. Weileun Fang at National Tsing Hua University, Hsinchu, Taiwan.
- Conference proceeding
- 2025
- 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025
- English