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Fabrication of omega-gated negative capacitance finfets and SRAM
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Fabrication of omega-gated negative capacitance finfets and SRAM

P.-J. Sung, C.-J. Su, D.D. Lu, S.-X. Luo, K.-H. Kao, J.-Y. Ciou, C.-Y. Jao, H.-S. Hsu, C.-J. Wang, T.-C. Hong, …
2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
2019
DOI: https://doi.org/10.1109/VLSI-TSA.2019.8804663

摘要

CMOS integrated circuits Fabrication FinFET VLSI circuits CMOS inverters FinFETs Forming gas annealing Negative capacitance Subthreshold Voltage gain Capacitance
Omega-gated negative capacitance (NC) FinFETs, CMOS inverters and SRAM are fabricated and analyzed. Forming gas annealing (FGA) is performed and found to not only enhance ferroelectricity (FE) but also the NCFET electrostatics, in terms of higher \mathrm{I}-{\mathrm{ON}}, smaller hysteresis and subthreshold slop (SS). The SS is less than 60 mV/dec for both N-FinFET and P-FinFET in this work. Moreover, the CMOS inverter shows more symmetric and larger voltage gain after FGA. © 2019 IEEE.

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85072101546&doi=10.1109%2fVLSI-TSA.2019.8804663&partnerID=40&md5=9ca787bb4b8befcbadf9f6087c5e496f檢視

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