摘要
This study introduces a ferroelectric negative capacitance radio frequency (RF)-FinFET. The ferroelectric characteristics of the developed TiN/ solid-solution hafnium zirconium (SS-HZO)/TiN metal-insulator-metal (MIM) capacitor were confirmed through k-V analysis at different temperature. In this research, a NC-FinFET using 5 nm SS-HZO with ferroelectric negative capacitance (NC) effect is fabricated for comparative analysis. In the DC and RF characteristic analysis, the SS-HZO NC-FinFET with a gate length of 80 nm exhibits the minimum subthreshold swing \left(\text{SS}_{\min}\right) of 62.9 mV/dec, an I on /I off ratio of 9.08 \times 10^{7} , drain-induced barrier lowering (DIBL) of 31.6 mV/V, it also achieves the highest cut-off frequency \left(\mathrm{F}_{\mathrm{t}}\right) of 13.65 GHz and a maximum oscillation frequency \left(\mathrm{F}_{\max}\right) of 22.73 GHz.