摘要
To improve GaN-based system performance, this work demonstrates the 650V GaN field plate (FP) design and the optimized integrated circuit (IC) package. The source FP length is suggested to be longer but less than three times the split high FP (HFP). The connection of the split FP and the 1^{\text{ST}} FP to source FP can reduce Coss. Longer 1^{\text{ST}} FP and shorter Gap design enhance the Miller ratio and suppress the ringing effect in case of switching. The asynchronous boost converter can be implemented with minimal parasitics and double-sided cooling in a proposed 3D IC package.