First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

X.-R. Yu; W.-H. Chang; T.-C. Hong; P.-J. Sung; A. Agarwal; G.-L. Luo; C.-T. Wu; K.-H. Kao; C.-J. Su; S.-W. Chang; W.-H. Lu; P.-Y. Fu; J.-H. Lin; P.-H. Wu; T.-C. Cho; W.C.-Y. Ma; D.-D. Lu; T.-S. Chao; T. Maeda; Y.-J. Lee; W.-F. Wu; W.-K. Yeh; Y.-H. Wang

doi:10.1109/VLSITechnologyandCir46769.2022.9830316

會議論文集

First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

X.-R. Yu, W.-H. Chang, T.-C. Hong, P.-J. Sung, A. Agarwal, G.-L. Luo, C.-T. Wu, K.-H. Kao, C.-J. Su, S.-W. Chang, …

Digest of Technical Papers - Symposium on VLSI Technology, 卷.2022-June, 頁碼.399-400

2022

DOI: https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830316

摘要

Electron diffraction

Bonding technology

Device performance

Ge(100)

Ge(111)

Lows-temperatures

Manufacturability

Selected area diffraction

Voltage gain

XRD

Temperature

To solve the mobility balance issue in nanosheet FETs (NSFETs) and complementary FETs (CFETs), the aggressive approach using hetero-oriented integration with Ge channels was demonstrated by low temperature hetero-layer bonding technology (LT-HBT). Good manufacturability of the hetero-oriented Ge platform was verified with XRD 2?-? scan, Raman spectra, Selected Area Diffraction (SAD), and Converged Beam Electron Diffraction (CBED). Balanced device performance in terms of C-V, ID-VG, ID-VD and ?c for Ge (111) nFET and Ge (100) pFET was achieved, leading to better VTCs and voltage gains. © 2022 IEEE.

檔案與連結 (1)

url

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85135207895&doi=10.1109%2fVLSITechnologyandCir46769.2022.9830316&partnerID=40&md5=36a463addcdc92eadb78af5c5a51fc7c檢視

指標

1 檢視次數

詳細資料

題名: First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
創作者：: X.-R. Yu - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.-H. Chang - National Institute of Advanced Industrial Science and Technology
T.-C. Hong
P.-J. Sung - Taiwan Semiconductor Manufacturing Company (Taiwan)
A. Agarwal - National Cheng Kung University
G.-L. Luo - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-T. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
K.-H. Kao - National Cheng Kung University
C.-J. Su - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.-W. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.-H. Lu - Taiwan Semiconductor Manufacturing Company (Taiwan)
P.-Y. Fu
J.-H. Lin - National Sun Yat-sen University
P.-H. Wu - National Sun Yat-sen University
T.-C. Cho - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.C.-Y. Ma
D.-D. Lu - National Cheng Kung University
T.-S. Chao - National Yang Ming Chiao Tung University
T. Maeda - National Institute of Advanced Industrial Science and Technology
Y.-J. Lee - National University of Kaohsiung
W.-F. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.-K. Yeh - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.-H. Wang - National Cheng Kung University
出版者: Institute of Electrical and Electronics Engineers Inc.
學術資源類型: 會議論文集
出版日期: 2022
出版資訊: Digest of Technical Papers - Symposium on VLSI Technology, 卷.2022-June, 頁碼.399-400
語言: 英語

First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

摘要

檔案與連結 (1)

相關連結

指標

詳細資料

National Tsing Hua University 社交媒體