Full-Chip ESD for the Monolithic GaN-Based Gate Driver With Ultra-Low Leakage Current

會議論文集

S. -H. Hung, P. -J. Chiu, C. -Y. Chen, X. -Q. Wu, Y. -T. Huang, C. -W. Cho, K. -H. Chen, Y. -H. Lin, T. -Y. Tsai, S. -R. Lin, …

2025 IEEE International Electron Devices Meeting (IEDM), 頁碼.1-4

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題名: Full-Chip ESD for the Monolithic GaN-Based Gate Driver With Ultra-Low Leakage Current
創作者：: S. -H. Hung - National Yang Ming Chiao Tung University
P. -J. Chiu - National Yang Ming Chiao Tung University
C. -Y. Chen - National Yang Ming Chiao Tung University
X. -Q. Wu - National Yang Ming Chiao Tung University
Y. -T. Huang - National Yang Ming Chiao Tung University
C. -W. Cho - National Yang Ming Chiao Tung University
K. -H. Chen - National Yang Ming Chiao Tung University
Y. -H. Lin - Realtek (Taiwan)
T. -Y. Tsai - Realtek (Taiwan)
S. -R. Lin - Realtek (Taiwan)
H. -H. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
學術資源類型: 會議論文集
出版資訊: 2025 IEEE International Electron Devices Meeting (IEDM), 頁碼.1-4