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Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO2-ZrO2 Superlattice Gate Insulator and Microwave Annealing for BEOL Applications
會議論文集

Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO2-ZrO2 Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

Chih-Hsiang Chang, Siao-Cheng Yan, Chong-Jhe Sun, Ming-Yueh Huang, Bo-An Chen, Xin-Chan Zhong, Yi-Wen LinYung-Chun Wu
IEEE Silicon Nanoelectronics Workshop, 頁碼.31-32
IEEE Silicon Nanoelectronics Workshop
01/01/2023

摘要

Computer Science Computer Science, Interdisciplinary Applications Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Technology
We report the BEOL compatible poly-Si thin-film transistor (TFT) below 400 degrees C by green laser crystallization and microwave annealing. The TEM image reveals the HfO2-ZrO2 superlattice (SL-HZO) structure of the dielectric layer. The p-type device shows good electrical properties, including I-ON/I-OFF ratio > 10(6), subthreshold swing (SS) = 75 mV/dec, and low DIBL = 24.18 mV/V. Furthermore, we demonstrate the characteristics of the CMOS inverter and the voltage transfer curve (VTC) indicates the acceptable voltage gain.

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