摘要
This study investigated the impact of annealing temperature on superlattice HfO 2 /ZrO 2 (SL-HZO) metal-insulator-metal and metal-insulator-semiconductor capacitors. A SL-HZO with a layer thickness of 0.5 nm exhibited ultrahigh dielectric constant and low equivalent oxide thickness at an annealing temperature of 450°C, attributed to the morphotropic phase boundary crystalline phase. This optimized condition was integrated into a superlattice SiGe/Si p-type gate-all-around field-effect transistor, achieving excellent subthreshold swing and a high on/off current ratio.