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Investigation of HfO2/ZrO2 Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET
會議論文集

Investigation of HfO2/ZrO2 Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET

Ming-Yueh Huang, Siao-Cheng Yan, Xin-Chan Zhong, Chih-Siang Chang, Chong-Jhe Sun, Bo-An Chen, Yi-Wen Lin 和 Yung-Chun Wu
IEEE Silicon Nanoelectronics Workshop, 頁碼.125-126
IEEE Silicon Nanoelectronics Workshop
01/01/2023
DOI: https://doi.org/10.23919/SNW57900.2023.10183920

摘要

Computer Science Computer Science, Interdisciplinary Applications Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Technology
In this study, we fabricated 12 nmthick Hf0.5Zr0.5O2 (HZO)/HfO2-ZrO2 superlattice (SL-HZO) ferroelectric FinFET (Fe-FinFET) with SiO2/AlON interfacial layers (IL) for comparison. Compared to conventional HZO, SL-HZO FeFinFET shows a larger memory window (MW). Meanwhile, the AlON-based device owns lower operation voltage due to a more significant voltage drop across the FE layer. Overall, SL-HZO FeFinFET with AlON IL unleashes the potential of FeFET memory, enabling both low power consumption and a large MW.

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