摘要
A new CMOS current readout structure for the infrared (IR) focal-plane-array (FPA), called the buffered gate modulation input (BGMI) circuit is proposed and analyzed. This new readout circuit can achieve a high charge sensitivity with the adaptive current gain and has a good immunity from threshold-voltage variations. Moreover, the readout dynamic range is dramatically increased by using a threshold-voltage independent current-mode background suppression technique. The BGMI circuit with current-mode background suppression has been designed and simulated. It has been shown that high injection efficiency, high charge sensitivity, high dynamic range, large storage capacity, and low noise performance are achieved in a 50×50 μm 2 pixel size. These advantageous traits make the BGMI circuit suitable for the applications with a large background current range.