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Plasma-damage optimization of the liner-removal process for 300 mm 0.13 /spl mu/m copper dual-damascene BEOL manufacturing
會議論文集

Plasma-damage optimization of the liner-removal process for 300 mm 0.13 /spl mu/m copper dual-damascene BEOL manufacturing

Shu-Huei Sun, Shih-Ming Chen, Joseph Weng-Liang Fang, Ching-Yu Huang, Tsai-Chun Li, Chun-Chen Lin, Shawming Ma 和 M. Kutney
2004 IEEE/Semi Advanced Semiconductor Manufacturing Conference and Workshop, 頁碼.213-216
2004
Web of Science ID: WOS:000221800700044

摘要

Cathodes Condition monitoring Copper Etching Feedback Manufacturing processes Plasma applications Plasma displays Plasma materials processing Pulp manufacturing
In this paper, an approach for optimizing plasma-charging damage of liner-removal process for 300 mm copper dual-damascene BEOL manufacturing is described. A specially designed cathode was first used to screen the process parameter response on damage performance. Real-time monitoring of etcher parameters during the process provided fast feedback about any plasma transient instability. Implementation of match tune and load preset methodology further improved the plasma transient uniformity to ensure an acceptable plasma-damage performance window from antenna MOS transistor parametric test results.

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