摘要
This study investigates bonded SiCN films through four-point bending tests, evaluating energy release rates and fracture behavior under various bending rates, sample sizes, and pin pitches. The modified virtual crack closure technique (MVCCT) is utilized to validate experimental findings and differentiate mode I and mode II contributions. Experimental results show that the bonding energy over 2.33 \ J m2 was obtained under room temperature. The simulation results reveal that the fracture mode is dominated by mode I tensile failure. Notably, increasing the sample width enhances data reliability, while a moderate bending rate is preferred. Furthermore, the four-point bending test has a testing limit (<2.33 \ J m2), as the breakage in this study was at SiCN Si. These findings provide a deeper understanding of dielectric bonding energy measurement. © 2025 IEEE.