Reversible Modulation of InP Nanowire Lasers via Ionic Liquid Gating

C.-H. Wu; G.-T. Lin; P.-C. Shih; K.-P. Chen

doi:10.1364/CLEO_SI.2025.SS124_6

會議論文集

Reversible Modulation of InP Nanowire Lasers via Ionic Liquid Gating

C.-H. Wu, G.-T. Lin, P.-C. Shih 和 K.-P. Chen

CLEO: Science and Innovations - Proceedings CLEO 2025

2025

DOI: https://doi.org/10.1364/CLEO_SI.2025.SS124_6

摘要

Indium

Indium phosphide

Ionic liquids

Lasers

Nanowires

Photonics

Semiconducting indium phosphide

Carrier dynamics

Gate voltages

Indium phosphide nanowires

InP

Wavelength shift

III-V semiconductors

Carrier dynamics in indium phosphide nanowires (InP NWs) was engineered through ionic liquid gating. A wavelength shift of 1.4 nm and repetitive switching between spontaneous and stimulated emission was demonstrated under minimal gate voltages. © Optica Publishing Group 2025.

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詳細資料

題名: Reversible Modulation of InP Nanowire Lasers via Ionic Liquid Gating
創作者：: C.-H. Wu - National Yang Ming Chiao Tung University
G.-T. Lin - National Tsing Hua University
P.-C. Shih - National Tsing Hua University
K.-P. Chen - National Tsing Hua University
出版者: Optical Society of America
學術資源類型: 會議論文集
出版日期: 2025
出版資訊: CLEO: Science and Innovations - Proceedings CLEO 2025
語言: 英語

Reversible Modulation of InP Nanowire Lasers via Ionic Liquid Gating

摘要

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詳細資料

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