摘要
Microwave annealing were able for the applications of dopant activation[1,2] and silicidation[3] of the nano-scaled transistors, However, during conventional fixed-frequency microwave heating, standing wave patterns are formed in the microwave processing chamber resulting in nodes and antinodes over the processing area. This non-uniform energy distribution in turn results in non-uniform heating, commonly observed in the kitchen microwave oven. Coupling effects to improve the uniformity and dopant activation efficiency by fixed-frequency microwave annealing process was investigated[4]. Through the aid of susceptors, the uniformity of Rs and dopant activation efficiency could be improved. © 2015 IEEE.