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Study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter
會議論文集

Study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

Xin-Chan Zhong, Siao-Cheng Yan, Ming-Yueh Huang, Chih-Siang Chang, Chong-Jhe Sun, Bo-An Chen, Yi-Wen Lin 和 Yung-Chun Wu
IEEE Silicon Nanoelectronics Workshop, 頁碼.33-34
IEEE Silicon Nanoelectronics Workshop
01/01/2023
DOI: https://doi.org/10.23919/SNW57900.2023.10183981

摘要

Computer Science Computer Science, Interdisciplinary Applications Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Technology
In this study, the SL HZO GAAFET were fabricated and compared with theHZO GAAFET. The SL HZO device showed higher Ion/Ioff, lower SS, smaller DIBL, and higher maximum Gm. Additionally, the n- and p-type SL HZO GAAFETs were used to demonstrate the feasibility of a CMOS inverter with complete switching functionality. These results suggest that SL HZO GAAFETs hold promise for future nanoelectronics applications.

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