摘要
This study explores the potential application of HfO 2 /ZrO 2 superlattice (SL-HZO) in cryogenic CMOS technology. We fabricated HfO 2 /ZO 2 with a thickness of 0.3nm per layer, and compared to conventional solid-solution Hf 0.5 Zr 0. 5 O 2 (HZO) thin films, SL-HZO with mixed ferroelectric-antiferroelectric phases exhibited a high dielectric constant, stable capacitance, and excellent reliability. Furthermore, after integrating this 0.3nm SL-HZO material into germanium nanosheet gate-all-around field-effect transistors (Ge NS-GAAFET), cryogenic tests at 4K achieved a subthreshold swing of 28.7 mV/dec, an 𝐈_(𝐨𝐧)/𝐈_(𝐨𝐟𝐟) ratio of 2.22 × 10⁸ , and a drain-induced barrier lowering (DIBL) of 8mV/V, demonstrating outstanding electrical performance. The results indicate that 0.3 nm SL-HZO holds significant potential for future high-performance computing applications (HPC).