Sub-60 mV/dec germanium nanowire field-effect transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2

Y.-W. Lin; T.-Y. Yu; C.-J. Su; Y.-N. Chen; H.-H. Chang; G.-L. Luo; C.-T. Wu; W.-F. Wu; K.-L. Lin; F.-J. Hou; Y.-C. Wu; W.-K. Yeh

doi:10.1109/VLSI-TSA51926.2021.9440120

會議論文集

Sub-60 mV/dec germanium nanowire field-effect transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2

Y.-W. Lin, T.-Y. Yu, C.-J. Su, Y.-N. Chen, H.-H. Chang, G.-L. Luo, C.-T. Wu, W.-F. Wu, K.-L. Lin, F.-J. Hou, …

VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

2021

DOI: https://doi.org/10.1109/VLSI-TSA51926.2021.9440120

摘要

Alumina

Aluminum oxide

Atomic layer deposition

Ferroelectricity

Germanium

Hafnium compounds

Nanowires

Rapid thermal annealing

Rapid thermal processing

VLSI circuits

Zirconium compounds

Drain voltage

Germanium nanowires

Interfacial layer

Low hysteresis

Microwave annealing

N-type Ge

Rapid thermal annealing (RTA)

Subthreshold slope

Field effect transistors

We report an n-type Ge nanowire ferroelectric-Hf0.5Zr0.5O2 field effect transistor (Ge NW FE-HZO FET) was experimentally demonstrated. An in-situ ALD O3 treatment was carried out to form an atomically-thin (~0.4 nm) interfacial layer (IL) of GeOx, followed by a 2-nm FE-HZO capped with a 1-nm Al2O3 layer. It is found that microwave annealing (MWA) sample shows better uniformity of FE-HZO properties compared to rapid thermal annealing (RTA). The fabricated Ge NW FE-HZO FET shows minimum subthreshold slope (SSmin) of 55 mV/decade and ION/IOFF ratio of 8.1 × 104 with low hysteresis (30 mV) at drain voltage (VD) of 0.1 V. © 2021 IEEE.

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題名: Sub-60 mV/dec germanium nanowire field-effect transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2
創作者：: Y.-W. Lin
T.-Y. Yu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-J. Su - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.-N. Chen - National Tsing Hua University
H.-H. Chang - National Tsing Hua University
G.-L. Luo - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-T. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.-F. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
K.-L. Lin
F.-J. Hou - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.-C. Wu - National Tsing Hua University
W.-K. Yeh - Taiwan Semiconductor Manufacturing Company (Taiwan)
出版者: Institute of Electrical and Electronics Engineers Inc.
學術資源類型: 會議論文集
出版日期: 2021
出版資訊: VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
語言: 英語

Sub-60 mV/dec germanium nanowire field-effect transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2

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